Realization of Zero-Field Skyrmions in a Magnetic Tunnel Junction
Citation:
Bin He, Yue Hu, Chenbo Zhao, Jinwu Wei, Junwei Zhang, Yu Zhang, Chen Cheng, Jiahui Li, Zhuyang Nie, Yanxiang Luo, Yan Zhou, Shilei Zhang, Zhongming Zeng, Yong Peng, John Michael David Coey, Xiufeng Han, Guoqiang Yu, Realization of Zero-Field Skyrmions in a Magnetic Tunnel Junction, Advanced Electronic Materials, 9, 2023, 2201240 - 1-8Download Item:
Abstract:
Magnetic skyrmions are topologically protected noncollinear spin textures, which are regarded as promising information carriers for next-generation spintronic devices due to their small size and the low current density needed to drive their motion. Stability of skyrmions in zero external magnetic field is important for promoting fundamental studies and device applications. A few zero-field skyrmion-hosting materials have been developed, but none of them have been successfully integrated into a magnetic tunnel junction (MTJ), a crucial device for converting skyrmion information into an electrical signal. Here, a zero-field exchange-biased skyrmion material is developed and incorporated into an MTJ device. An Ir layer is inserted between the antiferromagnetic and ferromagnetic layers, which plays a crucial role in prohibiting interlayer diffusion under thermal annealing, resulting in simultaneous enhancement of exchange bias and thermal stability. The smallest zero-field skyrmions have a size of 100 nm at room temperature. The zero-field skyrmion material is then integrated into a perpendicularly magnetized MTJ, leading to the first demonstration of zero-field skyrmions in an MTJ, which is an important step toward developing skyrmion-based spintronic devices.
Sponsor
Grant Number
National Natural Science Foundation of China (60703033).
12274437, 52161160334
Science Foundation of China
5208810
Author's Homepage:
http://people.tcd.ie/venkatemhttp://people.tcd.ie/jcoey
Description:
PUBLISHED
Author: Coey, John
Sponsor:
National Natural Science Foundation of China (60703033).Science Foundation of China
Type of material:
Journal ArticleCollections:
Series/Report no:
Advanced Electronic Materials;9;
Availability:
Full text availableSubject (TCD):
Nanoscience & Materials , Applied physics , Condensed matter, electronic, magnetic and superconductive properties , Magnetism and spin electronics , NanotechnologyDOI:
https://doi.org/10.1002/aelm.202201240Source URI:
https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202201240ISSN:
2199-160XThe following license files are associated with this item: