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dc.contributor.authorCOEY, JOHNen
dc.contributor.authorWU, HAN-CHUNen
dc.date.accessioned2011-09-02T15:26:23Z
dc.date.available2011-09-02T15:26:23Z
dc.date.issued2011en
dc.date.submitted2011en
dc.identifier.citationG. Feng, H. C. Wu, J. F. Feng and J. M. D. Coey, Temperature dependent coercivity crossover in pseudo-spin-valve magnetic tunnel junctions with perpendicular anisotropy, Applied Physics Letters, 99, 4, 2011, 042502-en
dc.identifier.otherYen
dc.descriptionPUBLISHEDen
dc.description.abstractWe report the temperature dependent collapse of tunnel magnetoresistance (TMR) in perpendicular anisotropy magnetic tunnel junctions (pMTJs) with AlO(x) barriers and (Co/Pt)(3) multilayer electrodes, due to the coercivity crossover of the top and bottom (Co/Pt)(3) stacks. The different temperature dependence of two (Co/Pt)(3) stacks in pMTJs is mainly caused by the additional perpendicular anisotropy created at interface between the ferromagnetic electrode and the AlO(x) barrier.en
dc.description.sponsorshipThis work was supported by SFI as part of the MANSE project 2005/IN/1850 and was conducted under the framework of the INSPIRE programme funded by the Irish Government's Programme for Research in Third Level Institutions, Cycle 4, National Development Plan 2007-2013.en
dc.format.extent042502en
dc.language.isoenen
dc.relation.ispartofseriesApplied Physics Lettersen
dc.relation.ispartofseries99en
dc.relation.ispartofseries4en
dc.rightsYen
dc.subjectAtomic, molecular and chemical physicsen
dc.subjectMagnetic anisotropyen
dc.subjectHigh coercivity materialsen
dc.titleTemperature dependent coercivity crossover in pseudo-spin-valve magnetic tunnel junctions with perpendicular anisotropyen
dc.typeJournal Articleen
dc.contributor.sponsorScience Foundation Ireland (SFI)en
dc.contributor.sponsorHigher Education Authority (HEA)en
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/jcoeyen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/wuh2en
dc.identifier.rssinternalid74826en
dc.contributor.sponsorGrantNumber2005/IN/1850en
dc.subject.TCDThemeNanoscience & Materialsen
dc.identifier.rssurihttp://dx.doi.org/10.1063/1.3614000en
dc.identifier.urihttp://hdl.handle.net/2262/59262


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