Large magnetoresistance in few layer graphene stacks with current perpendicular to plane geometry
File Type:
PDFItem Type:
Journal ArticleDate:
2012Access:
OpenAccessCitation:
Liao, Z.-M., Wu, H.-C., Kumar, S., Duesberg, G.S., Zhou, Y.-B., Cross, G.L.W., Shvets, I.V., Yu, D.-P., Large magnetoresistance in few layer graphene stacks with current perpendicular to plane geometry, Advanced Materials, 24, 14, 2012, 1862-1866Download Item:
Abstract:
Large magnetoresistance (MR) effect of few layers graphene between two non-magnetic metal electrodes with current perpendicular to graphene plane was studied. A non-saturation and anisotropic MR with the value over 60% at 14 T was observed in a two-layer graphene stack at room temperature. The resistance of the device is only tens of ohms, having the advantage of low power consumption for magnetic device applications.
Sponsor
Grant Number
Science Foundation Ireland (SFI)
08/CE/I
Science Foundation Ireland (SFI)
06/IN.1/I91
Science Foundation Ireland (SFI)
008/IN.1/I1932
Author's Homepage:
http://people.tcd.ie/crossghttp://people.tcd.ie/wuh2
http://people.tcd.ie/duesberg
http://people.tcd.ie/ivchvets
Description:
PUBLISHEDSponsor:
Science Foundation Ireland (SFI)Science Foundation Ireland (SFI)
Science Foundation Ireland (SFI)
Type of material:
Journal ArticleCollections
Series/Report no:
Advanced Materials24
14
Availability:
Full text availableDOI:
http://dx.doi.org/10.1002/adma.201104796Metadata
Show full item recordLicences: