Raman spectra of p-type transparent semiconducting Cr<inf>2</inf>O<inf>3</inf>:Mg
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2015Author:
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Fleischer K, Caffrey D, Farrell L, Norton E, Mullarkey D, Arca E, Shvets I.V, Raman spectra of p-type transparent semiconducting Cr<inf>2</inf>O<inf>3</inf>:Mg, Thin Solid Films, 594, 2015, 245 - 249Download Item:
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Abstract:
Abstract
We present an analysis of the Raman spectra of p-type transparent conducting Cr2O3:Mg grown by various techniques including spray pyrolysis, pulsed laser deposition, molecular beam epitaxy and reactive magnetron sputtering. The best performing films show a distinct broad range Raman signature related to defect-induced vibrational modes not seen in stoichiometric, undoped material. Our comparative study demonstrates that Raman spectroscopy can quantify unwanted dopant clustering in the material at high Mg concentrations, while also being sensitive to the Mg incorporation site. By correlating the Raman signature to the electrical properties of the films, growth processes can be optimised to give the best conducting films and the local defect structure for effective p-type doping can be studied.
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Science Foundation Ireland (SFI)
12/IA/1264
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http://people.tcd.ie/ivchvetshttp://people.tcd.ie/fleisck
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Author: SHVETS, IGOR; FLEISCHER, KARSTEN; CAFFREY, DAVID; FARRELL, LEO; NORTON, EMMA; MULLARKEY, DARAGH; ARCA, ELISABETTA
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Science Foundation Ireland (SFI)Type of material:
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Thin Solid Films594
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Nanoscience & MaterialsDOI:
http://dx.doi.org/10.1016/j.tsf.2015.03.076The following license files are associated with this item: