dc.contributor.author | PATTERSON, CHARLES | en |
dc.date.accessioned | 2018-02-14T12:30:55Z | |
dc.date.available | 2018-02-14T12:30:55Z | |
dc.date.issued | 2017 | en |
dc.date.submitted | 2017 | en |
dc.identifier.citation | P. Kumar and C. H. Patterson, Dielectric anisotropy of the GaP/Si(001) interface from first-principles theory, Physical Review Letters, 118, 23, 2017, 237403- | en |
dc.identifier.other | Y | en |
dc.description | PUBLISHED | en |
dc.format.extent | 237403 | en |
dc.language.iso | en | en |
dc.relation.ispartofseries | Physical Review Letters | en |
dc.relation.ispartofseries | 118 | en |
dc.relation.ispartofseries | 23 | en |
dc.rights | Y | en |
dc.title | Dielectric anisotropy of the GaP/Si(001) interface from first-principles theory | en |
dc.type | Journal Article | en |
dc.contributor.sponsor | Higher Education Authority (HEA) | en |
dc.type.supercollection | scholarly_publications | en |
dc.type.supercollection | refereed_publications | en |
dc.identifier.peoplefinderurl | http://people.tcd.ie/cpttrson | en |
dc.identifier.rssinternalid | 167658 | en |
dc.rights.ecaccessrights | openAccess | |
dc.contributor.sponsorGrantNumber | PRTLI V | en |
dc.subject.TCDTheme | Nanoscience & Materials | en |
dc.subject.TCDTag | NANOSTRUCTURES | en |
dc.identifier.orcid_id | 0000-0003-2187-5642 | en |
dc.status.accessible | N | en |
dc.identifier.uri | http://hdl.handle.net/2262/82394 | |