dc.contributor.author | Coleman, Jonathan | en |
dc.contributor.author | Carey, Tian | en |
dc.date.accessioned | 2023-03-09T16:23:39Z | |
dc.date.available | 2023-03-09T16:23:39Z | |
dc.date.issued | 2022 | en |
dc.date.submitted | 2022 | en |
dc.identifier.citation | Liu, S. and Ding, E.-X. and Kelly, A.G. and Doolan, L. and Gabbett, C. and Kaur, H. and Munuera, J. and Carey, T. and Garcia, J. and Coleman, J.N., Solution processed, vertically stacked hetero-structured diodes based on liquid-exfoliated WS2 nanosheets: from electrode-limited to bulk-limited behavior, Nanoscale, 14, 42, 2022, 15679-15690 | en |
dc.identifier.other | Y | en |
dc.description | PUBLISHED | en |
dc.description | cited By 1 | en |
dc.description.abstract | Vertically stacked metal–semiconductor-metal heterostructures, based on liquid-processed nanomaterials, hold great potential for various printed electronic applications. Here we describe the fabrication of such devices by spray-coating semiconducting tungsten disulfide (WS2) nanosheets onto indium tin oxide (ITO) bottom electrodes, followed by spraying single-walled carbon nanotubes (SWNTs) as the top electrode. Depending on the formulation of the SWNTs ink, we could fabricate either Ohmic or Schottky contacts at the WS2/SWNTs interface. Using isopropanol-dispersed SWNTs led to Ohmic contacts and bulk-limited devices, characterized by out-of-plane conductivities of ∼10−4 S m−1. However, when aqueous SWNTs inks were used, rectification was observed, due to the formation of a doping-induced Schottky barrier at the WS2/SWNTs interface. For thin WS2 layers, such devices were characterized by a barrier height of ∼0.56 eV. However, increasing the WS2 film thickness led to increased series resistance, leading to a change-over from electrode-limited to bulk-limited behavior at a transition thickness of ∼2.6 μm. This work demonstrates that Ohmic/Schottky behavior is tunable and lays the foundation for fabricating large-area 2D nanosheet-based solution-deposited devices and stacks. | en |
dc.format.extent | 15679-15690 | en |
dc.language.iso | en | en |
dc.relation.ispartofseries | Nanoscale | en |
dc.relation.ispartofseries | 14 | en |
dc.relation.ispartofseries | 42 | en |
dc.rights | Y | en |
dc.subject | Nanomaterials | en |
dc.subject | Semiconductors | en |
dc.subject | Nanosheets | en |
dc.title | Solution processed, vertically stacked hetero-structured diodes based on liquid-exfoliated WS2 nanosheets: from electrode-limited to bulk-limited behavior | en |
dc.type | Journal Article | en |
dc.type.supercollection | scholarly_publications | en |
dc.type.supercollection | refereed_publications | en |
dc.identifier.peoplefinderurl | http://people.tcd.ie/colemaj | en |
dc.identifier.peoplefinderurl | http://people.tcd.ie/careyti | en |
dc.identifier.rssinternalid | 251061 | en |
dc.identifier.doi | http://dx.doi.org/10.1039/d2nr04196k | en |
dc.rights.ecaccessrights | openAccess | |
dc.identifier.orcid_id | 0000-0001-9659-9721 | en |
dc.contributor.sponsor | Science Foundation Ireland (SFI) | en |
dc.contributor.sponsorGrantNumber | SFI/12/RC/2278_P2 | en |
dc.identifier.uri | http://hdl.handle.net/2262/102247 | |