Browsing School of Physics by Subject "ION IMPLANTATION"
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Electron paramagnetic resonance of erbium doped silicon
(American Institute of Physcis, 1996)Electron paramagnetic resonance measurements have been made on samples of float zone silicon, implanted with 1015 Er/cm2. One sample was coimplanted with oxygen to give an impurity concentration of 1020 O/cm3 and 1019 ...