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dc.contributor.authorDONEGAN, JOHNen
dc.date.accessioned2009-09-21T15:35:59Z
dc.date.available2009-09-21T15:35:59Z
dc.date.issued2008en
dc.date.submitted2008en
dc.identifier.citationQiaoyin Lu Weihua Guo Byrne, D. Donegan, J.F. , Design of Low V-pi High-Speed GaAs Travelling-Wave Electrooptic Phase Modulators Using an n-i-p-n Structure, IEEE Photonics Technology Letters, 20, 21, 2008, 1805-1807en
dc.identifier.otherYen
dc.descriptionPUBLISHEDen
dc.description.abstractGaAs-based electrooptic phase modulators using an n-i-p-n structure and coplanar waveguide traveling-wave electrodes are designed using the compact 2-D finite-difference time-domain technique and Pade approximation transform. By optimization, an electrical 3-dB bandwidth of 40 GHz and a 6.6-V are predicted for a 5-mm-long modulator.en
dc.format.extent1805-1807en
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.relation.ispartofseriesIEEE Photonics Technology Lettersen
dc.relation.ispartofseries20en
dc.relation.ispartofseries21en
dc.rightsYen
dc.subjectElectrooptic modulator, Pade approximation transform, 2-D finite-difference time-domain (FDTD) method, traveling-wave (TW) electrodes.en
dc.titleDesign of Low V-pi High-Speed GaAs Travelling-Wave Electrooptic Phase Modulators Using an n-i-p-n Structureen
dc.typeJournal Articleen
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/jdoneganen
dc.identifier.rssinternalid61047en
dc.identifier.doihttp://dx.doi.org/10.1109/LPT.2008.2005009en
dc.identifier.rssurihttp://dx.doi.org/10.1109/LPT.2008.2005009
dc.identifier.orcid_id0000-0002-5240-1434en
dc.identifier.urihttp://hdl.handle.net/2262/33028


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