dc.contributor.author | DONEGAN, JOHN | en |
dc.date.accessioned | 2009-09-21T15:35:59Z | |
dc.date.available | 2009-09-21T15:35:59Z | |
dc.date.issued | 2008 | en |
dc.date.submitted | 2008 | en |
dc.identifier.citation | Qiaoyin Lu Weihua Guo Byrne, D. Donegan, J.F. , Design of Low V-pi High-Speed GaAs Travelling-Wave Electrooptic Phase Modulators Using an n-i-p-n Structure, IEEE Photonics Technology Letters, 20, 21, 2008, 1805-1807 | en |
dc.identifier.other | Y | en |
dc.description | PUBLISHED | en |
dc.description.abstract | GaAs-based electrooptic phase modulators using
an n-i-p-n structure and coplanar waveguide traveling-wave
electrodes are designed using the compact 2-D finite-difference
time-domain technique and Pade approximation transform. By
optimization, an electrical 3-dB bandwidth of 40 GHz and a 6.6-V
are predicted for a 5-mm-long modulator. | en |
dc.format.extent | 1805-1807 | en |
dc.format.mimetype | application/pdf | |
dc.language.iso | en | en |
dc.relation.ispartofseries | IEEE Photonics Technology Letters | en |
dc.relation.ispartofseries | 20 | en |
dc.relation.ispartofseries | 21 | en |
dc.rights | Y | en |
dc.subject | Electrooptic modulator, Pade approximation transform, 2-D finite-difference time-domain (FDTD) method, traveling-wave (TW) electrodes. | en |
dc.title | Design of Low V-pi High-Speed GaAs Travelling-Wave Electrooptic Phase Modulators Using an n-i-p-n Structure | en |
dc.type | Journal Article | en |
dc.type.supercollection | scholarly_publications | en |
dc.type.supercollection | refereed_publications | en |
dc.identifier.peoplefinderurl | http://people.tcd.ie/jdonegan | en |
dc.identifier.rssinternalid | 61047 | en |
dc.identifier.doi | http://dx.doi.org/10.1109/LPT.2008.2005009 | en |
dc.identifier.rssuri | http://dx.doi.org/10.1109/LPT.2008.2005009 | |
dc.identifier.orcid_id | 0000-0002-5240-1434 | en |
dc.identifier.uri | http://hdl.handle.net/2262/33028 | |