Optically pumped ZnCdSe-ZnSe quantum wells
Citation:
Donegan, J.F., Heffernan, J.F., Hegarty,J., Hiei, H., Ishibashi, A.,.Jordan, C., Logue, F.P., Rees, P., Optically pumped ZnCdSe-ZnSe quantum wells, Proceedings of SPIE, Physics and Simulation of Optoelectronic Devices IV, San Jose, CA, USA, 29th January, Weng W. Chow, Marek Osinski, 2693, 1996, 121 - 127Download Item:
Abstract:
We have measured the gain spectrum of an optically pumped 40A ZnCdSe-ZnSe multiple quantum
well. Our calculation, which includes many body effects such as Coulomb enhancement and spectral
broadening due to carrier scattering, gives excellent agreement with the experimental gain
measurements. We then show the importance of the inclusion of the Coulomb enhancement for the
calculation of optical gain when predicting laser threshold currents. This is emphasised by using our
gain calculation as a basis to theoretically optimise a simple ZnCdSe-ZnSe quantum well laser
structure incorporating the leakage current over the p-type cladding.
Author's Homepage:
http://people.tcd.ie/jdoneganhttp://people.tcd.ie/jhegarty
Description:
PUBLISHEDSan Jose, CA, USA
Author: DONEGAN, JOHN; HEGARTY, JOHN
Other Titles:
Proceedings of SPIEPhysics and Simulation of Optoelectronic Devices IV
Type of material:
Conference PaperCollections
Series/Report no:
2693Availability:
Full text availableKeywords:
semiconductor laser diodes, Il-VI, optical gain, many body effectsDOI:
http://dx.doi.org/10.1117/12.238946Metadata
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