dc.contributor.author | HEGARTY, JOHN | |
dc.date.accessioned | 2010-02-15T13:25:55Z | |
dc.date.available | 2010-02-15T13:25:55Z | |
dc.date.issued | 1987 | |
dc.date.submitted | 1987 | en |
dc.identifier.citation | Tai, K. , Hegarty, J. , Tsang, W.T. , Observation of optical Stark effect in InGaAs/InP multiple quantum wells, Applied Physics Letters , 51, (3), 1987, p152 - 154 | en |
dc.identifier.other | Y | |
dc.description | PUBLISHED | en |
dc.description.abstract | We report an experimental observation of a blue shift in the n=1 heavy-hole exciton line of In0.53Ga0.47As/InP multiple quantum wells resulting from a picosecond photoexcitation in the transparent spectral region. The temporal response of this shift follows the excitation and it is attributed to the optical Stark effect. The shift was measured to be 0.19 meV for an incident light with a photon energy 20 meV below the exciton peak and with a 10-MW/cm2 intensity. | en |
dc.format.extent | 152 | en |
dc.format.extent | 154 | en |
dc.format.extent | 368276 bytes | |
dc.format.mimetype | application/pdf | |
dc.language.iso | en | en |
dc.publisher | American Institute of Physcis | en |
dc.relation.ispartofseries | Applied Physics Letters | en |
dc.relation.ispartofseries | 51 | en |
dc.relation.ispartofseries | 3 | en |
dc.rights | Y | en |
dc.subject | Stark effect | en |
dc.subject | semiconductor | en |
dc.title | Observation of optical Stark effect in InGaAs/InP multiple quantum wells | en |
dc.type | Journal Article | en |
dc.type.supercollection | scholarly_publications | en |
dc.type.supercollection | refereed_publications | en |
dc.identifier.peoplefinderurl | http://people.tcd.ie/jhegarty | |
dc.identifier.rssinternalid | 848 | |
dc.identifier.rssuri | http://dx.doi.org/10.1063/1.98905 | en |
dc.identifier.uri | http://hdl.handle.net/2262/37806 | |