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dc.contributor.authorHEGARTY, JOHN
dc.date.accessioned2010-02-16T14:53:10Z
dc.date.available2010-02-16T14:53:10Z
dc.date.issued2002
dc.date.submitted2002en
dc.identifier.citationDunbar LA, Stanley RP, Lynch M, Hegarty J, Oesterle U, Houdre R, Ilegems M, Excitation-induced coherence in a semiconductor microcavity, Physical Review B, 66, (19), 2002, p195307-1 - 195307-5en
dc.identifier.otherY
dc.descriptionPUBLISHEDen
dc.description.abstractWe measure the dephasing times of high finesse semiconductor microcavities in the strong coupling regime using degenerate four-wave mixing. We find that under certain excitation conditions (near-normal incidence) the dephasing time of the lower polariton branch increases with the excitation intensity. This excitation induced coherence indicates that the lower polariton is acting as a Bose particle.en
dc.format.extent195307-1en
dc.format.extent195307-5en
dc.format.extent64889 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.publisherAmerican Physical Societyen
dc.relation.ispartofseriesPhysical Review Ben
dc.relation.ispartofseries66en
dc.relation.ispartofseries19en
dc.rightsYen
dc.subjectPhysics
dc.titleExcitation-induced coherence in a semiconductor microcavityen
dc.typeJournal Articleen
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/jhegarty
dc.identifier.rssinternalid29093
dc.identifier.rssurihttp://dx.doi.org/10.1103/PhysRevB.66.195307en
dc.contributor.sponsorEnterprise Irelanden
dc.identifier.urihttp://hdl.handle.net/2262/38040


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