| dc.contributor.author | HEGARTY, JOHN | |
| dc.date.accessioned | 2010-03-10T15:46:28Z | |
| dc.date.available | 2010-03-10T15:46:28Z | |
| dc.date.issued | 1993 | |
| dc.date.submitted | 1993 | en |
| dc.identifier.citation | Moloney, M. H.; Heffernan, J. F.; Hegarty, J.; Grey, R.; Woodhead, J., Strain effect on the optical nonlinearity in an InGaAs/GaAs asymmetric Fabry-Perot modulator., Applied Physical Letters, 63, 4, 1993, 435 - 437 | en |
| dc.identifier.other | Y | |
| dc.description | PUBLISHED | en |
| dc.description.abstract | The effect of strain on the optical nonlinearities and operation of an all-optical asymmetric
Fabry-Perot italon is investigated. A high reflectivity modulation of 60% is reported with a
contrast ratio of 12.2:1 and insertion loss of 1.87 dB. High contrast is achieved through
absorption matching requiring a thick active layer. The effect of a thick structure on the strain
reduced saturation carrier density is measured. The saturation density is calculated to be a factor
of 2.5 less than in a similar GaAs modulator, showing thicker strained devices still display the
advantages of thinner structures. | en |
| dc.format.extent | 435 | en |
| dc.format.extent | 437 | en |
| dc.language.iso | en | en |
| dc.publisher | American Physical Society | en |
| dc.relation.ispartofseries | Applied Physical Letters; | |
| dc.relation.ispartofseries | 63; | |
| dc.relation.ispartofseries | 4; | |
| dc.rights | Y | en |
| dc.subject | Physics | |
| dc.title | Strain effect on the optical nonlinearity in an InGaAs/GaAs asymmetric Fabry-Perot modulator. | en |
| dc.type | Journal Article | en |
| dc.type.supercollection | scholarly_publications | en |
| dc.type.supercollection | refereed_publications | en |
| dc.identifier.peoplefinderurl | http://people.tcd.ie/jhegarty | |
| dc.identifier.rssinternalid | 877 | |
| dc.identifier.uri | http://hdl.handle.net/2262/38809 | |
