| dc.contributor.author | HEGARTY, JOHN | en |
| dc.date.accessioned | 2010-03-11T14:40:50Z | |
| dc.date.available | 2010-03-11T14:40:50Z | |
| dc.date.issued | 1993 | en |
| dc.date.submitted | 1993 | en |
| dc.identifier.citation | M. H. Moloney and J. Hegarty, L. Buydens and P. Demeester, R. Grey and J. Woodhead, Carrier lifetimes in strained InGaAs/(Al)GaAs multiple quantum wells, Applied Physics Letters, 62, 25, 1993, 3327 - 3329 | en |
| dc.identifier.other | Y | en |
| dc.description | PUBLISHED | en |
| dc.description.abstract | The etfect of strain, strain relief, and barrier design on the carrier lifetime in InGaAs/(Al)GaAs
multiple-quantum-well samples is investigated. Carriers lifetimes are measured in samples with
varying amount of strain, due to increasing indium concentration in the wells, as well as in
samples subject to strain relief, with thick barriers and GaAs barriers. Lifetimes of the order of
0.5 ns are measured. The lifetime is sensitive to the presence of indium in the wells but
remarkably insensitive to the indium concentration, the strain in the samples, and the barrier
composition. | en |
| dc.format.extent | 3327 | en |
| dc.format.extent | 3329 | en |
| dc.language.iso | en | en |
| dc.relation.ispartofseries | Applied Physics Letters | en |
| dc.relation.ispartofseries | 62 | en |
| dc.relation.ispartofseries | 25 | en |
| dc.rights | Y | en |
| dc.subject | Physics | |
| dc.title | Carrier lifetimes in strained InGaAs/(Al)GaAs multiple quantum wells | en |
| dc.type | Journal Article | en |
| dc.type.supercollection | scholarly_publications | en |
| dc.type.supercollection | refereed_publications | en |
| dc.identifier.peoplefinderurl | http://people.tcd.ie/jhegarty | en |
| dc.identifier.rssinternalid | 791 | en |
| dc.identifier.rssuri | http://dx.doi.org/10.1063/1.109060 | en |
| dc.identifier.uri | http://hdl.handle.net/2262/38810 | |
