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dc.contributor.authorCOLEMAN, JONATHAN NESBITen
dc.date.accessioned2010-04-21T16:23:11Z
dc.date.available2010-04-21T16:23:11Z
dc.date.issued2009en
dc.date.submitted2009en
dc.identifier.citationProctor JE, Gregoryanz E, Novoselov KS, Lotya M, Coleman JN, Halsall MP, High-pressure Raman spectroscopy of graphene, Physical Review B, 80, 7, 2009, 073408en
dc.identifier.otherYen
dc.descriptionPUBLISHEDen
dc.description.abstractIn situ high-pressure Raman spectroscopy is used to study monolayer, bilayer, and few-layer graphene samples supported on silicon in a diamond anvil cell to 3.5 GPa. The results show that monolayer graphene adheres to the silicon substrate under compressive stress. A clear trend in this behavior as a function of graphene sample thickness is observed. We also study unsupported graphene samples in a diamond anvil cell to 8 GPa and show that the properties of graphene under compression are intrinsically similar to graphite. Our results demonstrate the differing effects of uniaxial and biaxial strain on the electronic band structure.en
dc.description.sponsorshipThe authors would like to acknowledge the help of Malachy McGowan School of Electrical and Electronic Engineering, University of Manchester in the preparation of the graphene samples. We would also like to thank Chrystele Sanloup School of Geosciences, University of Edinburgh and David Dunstan Physics Deptartment, Queen Mary, University of London for advice about the calculations. This work was supported by a research grant from the U.K. Engineering and Physical Sciences Research Councilen
dc.format.extent073408en
dc.language.isoenen
dc.relation.ispartofseriesPhysical Review Ben
dc.relation.ispartofseries80en
dc.relation.ispartofseries7en
dc.rightsYen
dc.subjectPhysics
dc.subjectPhysics
dc.titleHigh-pressure Raman spectroscopy of grapheneen
dc.typeJournal Articleen
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/colemajen
dc.identifier.rssinternalid63890en
dc.identifier.urihttp://hdl.handle.net/2262/39144


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