dc.contributor.author | MC GOVERN, IGNATIUS | |
dc.date.accessioned | 2010-04-28T16:41:30Z | |
dc.date.available | 2010-04-28T16:41:30Z | |
dc.date.issued | 1992 | |
dc.date.submitted | 1992 | en |
dc.identifier.citation | McGrath, R., McGovern, I.T., Warburton, D.R., Purdie, D., Muryn, C.A., Prakash, N.S., Wincott, P.L., (...), Norman, D., Origin of the x-ray-absorption fine structure in photon-stimulated ion desorption from Si-adsorbate systems , Physical Review B, 45, 16, 1992, 9327-9338 | en |
dc.identifier.other | Y | |
dc.description | PUBLISHED | en |
dc.description.abstract | There is no general agreement on whether photon-stimulated ion desorption (PSID) extended and near-edge x-ray-absorption fine structure (EXAFS and NEXAFS) can provide surface structural information. To address this question, we have monitored the H+-ion yield from Si(100)2?1-H, Si(111)7?7-H2O, and Si(111)7?7-H at the substrate Si K edge and the Cl+-ion yield for the systems Si(100)2?1-Cl and Si(111)7?7-Cl at both the substrate Si K edge and adsorbate Cl K edge. Moreover, we reassess our previously published Si K-edge H+-ion yield data from the Si(100)2?1-H2O system. The EXAFS in the ion yield spectra is analyzed with a view to clarifying the physical processes deter- mining the ion yield. At the substrate Si K edge, the similarity of near-neighbor distances and coordination numbers to bulk values in all the systems studied indicates that the ion yield at this edge is dominated by x-ray-induced electron-stimulated desorption. This is corroborated by NEXAFS data at the same absorption edge. For Si(100)2?1-Cl and Si(111)7?7-Cl the Cl+-ion yield at the Cl K edge produces EXAFS and NEXAFS spectra identical to those recorded using Auger-electron yield, indicating the likely desorption mechanism to be a Knotek-Feibelman intra-atomic Auger process. The implications of these findings for PSID EXAFS, and NEXAFS are discussed. | en |
dc.format.extent | 9327-9338 | en |
dc.language.iso | en | en |
dc.relation.ispartofseries | Physical Review B; | |
dc.relation.ispartofseries | 45; | |
dc.relation.ispartofseries | 16; | |
dc.rights | Y | en |
dc.subject | Physics | |
dc.title | Origin of the x-ray-absorption fine structure in photon-stimulated ion desorption from Si-adsorbate systems | en |
dc.type | Journal Article | en |
dc.type.supercollection | scholarly_publications | en |
dc.type.supercollection | refereed_publications | en |
dc.identifier.peoplefinderurl | http://people.tcd.ie/imcgovrn | |
dc.identifier.rssinternalid | 64468 | |
dc.identifier.uri | http://hdl.handle.net/2262/39263 | |