Exposition of semiconducting and ferromagnetic properties of pulsed-laser-deposited thin films of LaFe1-xNixO3 (x=0.3, 0.4, and 0.5)
Citation:
Choudhary, R. J.; Kumar, R.; Khan, M. W.; Srivastava, J. P.; Patil, S. I.; Arora, S. K.; Shvets, I. V., Exposition of semiconducting and ferromagnetic properties of pulsed-laser-deposited thin films of LaFe1-xNixO3 (x=0.3, 0.4, and 0.5), Applied Physics Letters, 87, 13, 2005, 132104Download Item:
Abstract:
We have explored the possibility of ferromagnetic semiconducting property in the epitaxial thin
films of LaFe1?xNixO3 x=0.3, 0.4, and 0.5 grown on 001 oriented LaAlO3 substrate. We observe
that substitution of Ni in the series leads to the increase in conductivity of the samples with
conduction being controlled by the disorder-induced localization of charge carriers. All these
samples show ferromagnetic behavior at room temperature while their magnetization decreases with
increase in Ni concentration in the composition. The results have been explained on the basis of the
close interplay between the electrical and magnetic properties.
Author's Homepage:
http://people.tcd.ie/ivchvetshttp://people.tcd.ie/aroras
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PUBLISHED
Author: SHVETS, IGOR; ARORA, SUNIL KUMAR
Publisher:
American Institute of PhysicsType of material:
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Series/Report no:
Applied Physics Letters;87;
13;
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Surface Physics, thin filmsMetadata
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