dc.contributor.author | Donegan, John | en |
dc.contributor.author | Bradley, Louise | en |
dc.date.accessioned | 2010-08-09T11:26:32Z | |
dc.date.available | 2010-08-09T11:26:32Z | |
dc.date.issued | 2010 | en |
dc.date.submitted | 2010 | en |
dc.identifier.citation | O'Dowd, J, Guo, WH, Lynch, M, Flood, E, Bradley, AL, Donegan, JF, Description of polarisation dependence of two-photon absorption in silicon avalanche photodiodes, ELECTRONICS LETTERS, 46, 12, 2010, 854 - 856 | en |
dc.identifier.other | Y | en |
dc.description | PUBLISHED | en |
dc.description.abstract | A simple formula is obtained that very accurately describes the level of two-photon absorption (TPA) generated by elliptically polarised light in silicon avalanche photodiodes (Si-APDs). The dichroism parameter necessary to describe the polarisation dependence of TPA in Si-APDs at room temperature is determined to be +0.372 in the region of 1550 nm. | en |
dc.format.extent | 854 - 856 | en |
dc.language.iso | en | en |
dc.relation.ispartofseries | ELECTRONICS LETTERS | en |
dc.relation.ispartofseries | 46 | en |
dc.relation.ispartofseries | 12 | en |
dc.rights | Y | en |
dc.subject | Physics | en |
dc.subject | Photocurrent | en |
dc.title | Description of polarisation dependence of two-photon absorption in silicon avalanche photodiodes | en |
dc.type | Journal Article | en |
dc.type.supercollection | scholarly_publications | en |
dc.type.supercollection | refereed_publications | en |
dc.identifier.peoplefinderurl | http://people.tcd.ie/jdonegan | en |
dc.identifier.peoplefinderurl | http://people.tcd.ie/bradlel | en |
dc.identifier.rssinternalid | 67923 | en |
dc.identifier.doi | http://dx.doi.org/10.1049/el.2010.3090 | en |
dc.subject.TCDTheme | Nanoscience & Materials | en |
dc.identifier.rssuri | http://dx.doi.org/10.1049/el.2010.3090 | en |
dc.identifier.orcid_id | 0000-0002-5240-1434 | en |
dc.contributor.sponsor | Science Foundation Ireland (SFI) | en |
dc.identifier.uri | http://hdl.handle.net/2262/40410 | |