dc.contributor.author | SHVETS, IGOR | en |
dc.date.accessioned | 2010-08-17T15:00:36Z | |
dc.date.available | 2010-08-17T15:00:36Z | |
dc.date.issued | 2008 | en |
dc.date.submitted | 2008 | en |
dc.identifier.citation | Fursina, A.; Lee, S.; Sofin, R. G. S.; Shvets, I. V.; Natelson, D., Nanogaps with very large aspect ratios for electrical measurements, Applied Physics Letters, 92, 11, 2008, 133102 | en |
dc.identifier.other | Y | en |
dc.description | PUBLISHED | en |
dc.description.abstract | For nanoscale electrical characterization and device fabrication, it is often desirable to fabricate planar metal electrodes separated by large aspect ratio gaps with interelectrode distances well below 100?nm. We demonstrate a self-aligned process to accomplish this goal using a thin Cr film as a sacrificial etch layer. The resulting gaps can be as small as 10?nm and have aspect ratios exceeding 1000, with excellent interelectrode isolation. Such Ti/Au electrodes are demonstrated on Si substrates and are used to examine a voltage-driven transition in magnetite nanostructures. This shows the utility of this fabrication approach even with relatively reactive substrates. | en |
dc.format.extent | 133102 | en |
dc.language.iso | en | en |
dc.relation.ispartofseries | Applied Physics Letters | en |
dc.relation.ispartofseries | 92 | en |
dc.relation.ispartofseries | 11 | en |
dc.rights | Y | en |
dc.subject | Atomic, molecular and chemical physics | en |
dc.subject | thin films | en |
dc.title | Nanogaps with very large aspect ratios for electrical measurements | en |
dc.type | Journal Article | en |
dc.type.supercollection | scholarly_publications | en |
dc.type.supercollection | refereed_publications | en |
dc.identifier.peoplefinderurl | http://people.tcd.ie/ivchvets | en |
dc.identifier.rssinternalid | 55210 | en |
dc.identifier.rssuri | http://dx.doi.org/10.1063/1.2895644 | en |
dc.contributor.sponsor | Science Foundation Ireland (SFI) | en |
dc.identifier.uri | http://hdl.handle.net/2262/40471 | |