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    • Fabrication of ultra-shallow boron junctions using proximity rapid thermal diffusion 

      Nolan, Martina (Trinity College (Dublin, Ireland). Department of Electronic & Electrical Engineering, 2000)
      This work presents proximity rapid thermal diffusion (RTD) as a technique for fabricating shallow p-type junctions for LDD devices. Boron-doped spin-on dopant (SOD) is used as a dopant source in proximity RTD. Fourier ...