dc.contributor.author | HOLMES, JUSTIN DEREK | |
dc.date.accessioned | 2013-11-18T16:36:51Z | |
dc.date.available | 2013-11-18T16:36:51Z | |
dc.date.issued | 2013 | |
dc.date.submitted | 2013 | en |
dc.identifier.citation | McSweeney, W. ; Lotty, O. ; Mogili, N.V.V. ; Glynn, C. ; Geaney, H. ; Tanner, D. ; Holmes, J.D. ; O'Dwyer, C., Doping controlled roughness and defined mesoporosity in chemically etched silicon nanowires with tunable conductivity, Journal of Applied Physics, 114, 3, 2013 | en |
dc.identifier.other | Y | |
dc.description | PUBLISHED | en |
dc.description.abstract | By using Si(100) with different dopant type (n(++)-type (As) or p-type (B)), we show how
metal-assisted chemically etched (MACE) nanowires (NWs) can form with rough outer surfaces
around a solid NW core for p-type NWs, and a unique, defined mesoporous structure for highly
doped n-type NWs. We used high resolution electron microscopy techniques to define the
characteristic roughening and mesoporous structure within the NWs and how such structures can
form due to a judicious choice of carrier concentration and dopant type. The n-type NWs have a
mesoporosity that is defined by equidistant pores in all directions, and the inter-pore distance is
correlated to the effective depletion region width at the reduction potential of the catalyst at the
silicon surface in a HF electrolyte. Clumping in n-type MACE Si NWs is also shown to be
characteristic of mesoporous NWs when etched as high density NW layers, due to low rigidity (high
porosity). Electrical transport investigations show that the etched nanowires exhibit tunable
conductance changes, where the largest resistance increase is found for highly mesoporous n-type Si
NWs, in spite of their very high electronic carrier concentration. This understanding can be adapted
to any low-dimensional semiconducting system capable of selective etching through electroless, and
possibly electrochemical, means. The process points to a method of multiscale nanostructuring
NWs, from surface roughening of NWs with controllable lengths to defined mesoporosity
formation, and may be applicable to applications where high surface area, electrical connectivity,
tunable surface structure, and internal porosity are required. | en |
dc.description.sponsorship | W.M.S. acknowledges support under the framework of
the INSPIRE programme, funded by the Irish Government?s
Programme for Research in Third Level Institutions, Cycle
4, National Development Plan 2007-2013. We also thank
Dr Fathima Laffir for assistance with XPS measurements.
The authors also acknowledge financial support from the
European Union 7th Framework Programme under the
SiNAPS project (Project Ref. No. 257856). C.G. acknowledges
financial support from the Irish Research council
under Award No. RS/2011/797. C.O.D. acknowledges support
from Science Foundation Ireland under Award No.
07/SK/B1232a and from the UCC Strategic Research Fund. | en |
dc.language.iso | en | en |
dc.relation.ispartofseries | Journal of Applied Physics; | |
dc.relation.ispartofseries | 114; | |
dc.relation.ispartofseries | 3; | |
dc.rights | Y | en |
dc.subject | Porous silicon | en |
dc.subject | Crystalline silicon | en |
dc.subject | Anodic formation | en |
dc.subject | Arrays | en |
dc.subject | Nanostructures | en |
dc.title | Doping controlled roughness and defined mesoporosity in chemically etched silicon nanowires with tunable conductivity | en |
dc.type | Journal Article | en |
dc.type.supercollection | scholarly_publications | en |
dc.type.supercollection | refereed_publications | en |
dc.identifier.peoplefinderurl | http://people.tcd.ie/holmesjd | |
dc.identifier.rssinternalid | 89563 | |
dc.relation.ecprojectid | info:eu-repo/grantAgreement/EC/FP7/257856 | |
dc.rights.ecaccessrights | OpenAccess | |
dc.contributor.sponsor | European Union | en |
dc.contributor.sponsorGrantNumber | 257856 | en |
dc.contributor.sponsor | Science Foundation Ireland | en |
dc.contributor.sponsorGrantNumber | 10/INI/13006 | en |
dc.contributor.sponsor | Irish Research Council | en |
dc.contributor.sponsorGrantNumber | IRS/2011/797 | en |
dc.contributor.sponsor | Higher Education Authority | en |
dc.identifier.uri | http://hdl.handle.net/2262/67642 | |