Engineering the electronic structure of surface dangling bond nanowires of different size and dimensionality

Abstract

We demonstrate how the local density of electronic states evolves as the size and dimensionality of surface dangling bond nanowires are modified. These wires were fabricated using the probe of a scanning tunneling microscope on a hydrogen passivated n-type Si(100)-(2 ? 1) surface. We demonstrate that by varying the number and arrangement of dangling bonds on the surface it is possible to arbitrarily engineer the electronic characteristic of a surface nanowire from that of a semiconductor with a controllable band gap to that of a metal.