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dc.contributor.authorRUNGGER, IVANen
dc.contributor.authorSANVITO, STEFANOen
dc.date.accessioned2014-01-28T10:19:34Z
dc.date.available2014-01-28T10:19:34Z
dc.date.issued2013en
dc.date.submitted2013en
dc.identifier.citationKapildeb Dolui, Ivan Rungger, Chaitanya Das Pemmaraju, and Stefano Sanvito, Possible doping strategies for MoS2 monolayers: An ab initio study, Physical Review B, 88, 7, 2013, 075420-en
dc.identifier.otherYen
dc.descriptionPUBLISHEDen
dc.description.abstractDensity functional theory is used to systematically study the electronic properties of doped MoS2 monolayers, where the dopants are incorporated both via S/Mo substitution or as adsorbates. Among the possible substitutional dopants at the Mo site, Nb is identified as suitable p-type dopant, while Re is the donor with the lowest activation energy. When dopants are simply adsorbed on a monolayer we find that alkali metals shift the Fermi energy into the MoS2 conduction band, making the system n type. Finally, the adsorption of charged molecules is considered, mimicking an ionic liquid environment. We find that molecules adsorption can lead to both n- and p-type conductivity, depending on the charge polarity of the adsorbed speciesen
dc.description.sponsorshipThis work is supported by Science Foundation of Ireland (Grant No. 07/IN.1/I945) and by CRANN. I.R. acknowledges financial support from the King Abdullah University of Science and Technology ( ACRAB project). We thank Trinity Centre for High Performance Computing (TCHPC) for the computational resources provided.en
dc.format.extent075420en
dc.language.isoenen
dc.relation.ispartofseriesPhysical Review Ben
dc.relation.ispartofseries88en
dc.relation.ispartofseries7en
dc.rightsYen
dc.subjectPhysicsen
dc.titlePossible doping strategies for MoS2 monolayers: An ab initio studyen
dc.typeJournal Articleen
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/sanvitosen
dc.identifier.rssinternalid89876en
dc.identifier.doihttp://dx.doi.org/10.1103/PhysRevB.88.075420en
dc.rights.ecaccessrightsOpenAccess
dc.subject.TCDThemeNanoscience & Materialsen
dc.identifier.rssurihttp://prb.aps.org/abstract/PRB/v88/i7/e075420en
dc.contributor.sponsorScience Foundation Ireland (SFI)en
dc.contributor.sponsorGrantNumberG20267, G20348en
dc.contributor.sponsorScience Foundation Ireland (SFI)en
dc.contributor.sponsorGrantNumber07/IN.1/I945en
dc.identifier.urihttp://hdl.handle.net/2262/67907


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