Inkjet-defined field-effect transistors from chemical vapour deposited graphene
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2014Access:
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Sarah Hurch, Hugo Nolan, Toby Hallam, Nina C.Berner, Niall McEvoy, Georg S. Duesberg,, Inkjet-defined field-effect transistors from chemical vapour deposited graphene, Carbon, 71, 2014, 332-337Abstract:
In this work, inkjet printing methods are used to create graphene field effect transistors with mobilities up to 3000 cm2 V?1 s?1. A commercially-available chromium-based ink is used to define the device channel by inhibiting chemical vapour deposition of graphene in defined regions on a copper catalyst. We report on the patterned graphene growth using optical and electronic microscopy, Raman spectroscopy and X-ray photoelectron spectros- copy. Silver nanoparticle ink is used to create electrical contacts to the defined graphene regions. The resulting devices were characterised by electrical transport measurements at room temperature. As a result we are able to fabricate high-performance graphene field effect transistors entirely defined by a commercial inkjet printer with channel lengths of 50 lm.is
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http://people.tcd.ie/duesberghttp://people.tcd.ie/hallamt
http://people.tcd.ie/nolanh2
http://people.tcd.ie/mcevoyni
http://people.tcd.ie/nberner
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Carbon71
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GrapheneSubject (TCD):
Nanoscience & MaterialsDOI:
http://dx.doi.org/10.1016/j.carbon.2014.01.063Source URI:
http://www.sciencedirect.com/science/article/pii/S0008622314001158Metadata
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