| dc.contributor.author | DUESBERG, GEORG | en |
| dc.date.accessioned | 2014-10-13T12:16:19Z | |
| dc.date.available | 2014-10-13T12:16:19Z | |
| dc.date.issued | 2010 | en |
| dc.date.submitted | 2010 | en |
| dc.identifier.citation | Zhou, YB, Liao, ZM, Wang, YF, Duesberg, GS, Xu, J, Fu, QA, Wu, XS, Yu, DP, Ion irradiation induced structural and electrical transition in graphene, Journal of Chemical Physics, 133, 23, 2010, 234703- | en |
| dc.identifier.other | Y | en |
| dc.description | PUBLISHED | en |
| dc.description.abstract | The relationship between the electrical properties and structure evolution of single layer graphene was studied by gradually introducing the gallium ion irradiation. Raman spectrums show a structural transition from nano-crystalline graphene to amorphous carbon as escalating the degree of disorder of the graphene sample, which is in correspondence with the electrical transition from a Boltzmann diffusion transport to a carrier hopping transport. The results show a controllable method to tune the properties of graphene. | en |
| dc.format.extent | 234703 | en |
| dc.language.iso | en | en |
| dc.relation.ispartofseries | Journal of Chemical Physics | en |
| dc.relation.ispartofseries | 133 | en |
| dc.relation.ispartofseries | 23 | en |
| dc.rights | Y | en |
| dc.subject | Physics | en |
| dc.title | Ion irradiation induced structural and electrical transition in graphene | en |
| dc.type | Journal Article | en |
| dc.type.supercollection | scholarly_publications | en |
| dc.type.supercollection | refereed_publications | en |
| dc.identifier.peoplefinderurl | http://people.tcd.ie/duesberg | en |
| dc.identifier.rssinternalid | 97361 | en |
| dc.identifier.doi | http://dx.doi.org/10.1063/1.3518979 | en |
| dc.rights.ecaccessrights | openAccess | |
| dc.contributor.sponsor | National Science Foundation (NSF) | en |
| dc.contributor.sponsorGrantNumber | 10804002 | en |
| dc.identifier.uri | http://hdl.handle.net/2262/71475 | |
