Conductance enhancement due to interface magnons in electron-beam evaporated MgO magnetic tunnel junctions with CoFeB free layer deposited at different pressure
Citation:
Guo, P., Li, D.L., Feng, J.F., (...), Coey, J.M.D., Han, X.F., Conductance enhancement due to interface magnons in electron-beam evaporated MgO magnetic tunnel junctions with CoFeB free layer deposited at different pressure, Journal of Applied Physics, 116, 15, 2014, 153905-Download Item:
Abstract:
Electron-beam evaporated MgO-based magnetic tunnel junctions have been fabricated with the
CoFeB free layer deposited at Ar pressure from 1 to 4 mTorr, and their tunneling process has been
studied as a function of temperature and bias voltage. By changing the growth pressure, the junc-
tion dynamic conductance d
I
/d
V
, inelastic electron tunneling spectrum d
2
I
/d
V
2
, and tunneling mag-
netoresistance vary with temperature. Moreover, the low-energy magnon cutoff energy
E
C
derived
from the conductance versus temperature curve agrees with interface magnon energy obtained
directly from the inelastic electron tunneling spectrum, which demonstrates that interface magnons
are involved in the electron tunneling process, opening an additional conductance channel and thus
enhancing the total conductance
Sponsor
Grant Number
Science Foundation Ireland (SFI)
10/IN.1/13006
Author's Homepage:
http://people.tcd.ie/abdallmhttp://people.tcd.ie/jcoey
Description:
PUBLISHED
Author: COEY, JOHN
Sponsor:
Science Foundation Ireland (SFI)Type of material:
Journal ArticleCollections
Series/Report no:
Journal of Applied Physics116
15
Availability:
Full text availableKeywords:
MgO-based magnetic tunnel junctionsDOI:
http://dx.doi.org/10.1063/1.4898683Metadata
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