Electronic & Electrical Eng: Recent submissions
Now showing items 541-560 of 750
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Electrical Properties of High-k Ta205 Gate Dielectrics on Strained Ge-rich Layers
(IEEE, 2004)The electrical properties of ultrathin high-k Zr02 gate dielectric films dcposited on strained Gc-rich layers using microwave plasma enhanced chemical vapor deposition (PECVD) technique at a low temperature (150'C) have ... -
Polarized Raman Spectroscopy of Multilayer Ge/Si(001) Quantum Dot Heterostructures.
(American Institute of Physics, 2004)Polarized Raman spectroscopy in backscattering geometry has been applied here for the investigation of Ge/Si(001) quantum dot multilayer structures (with the number of layers ranging from 1 to 21) grown by the Stranski-Krastanov ... -
Raman investigation of different polytypes in SiC thin films grown by solid-gas phase epitaxy on Si (111) and 6H-SiC substrates
(2010)Raman spectroscopy was applied to investigate a series of SiC films grown on Si and 6HSiC substrates by a new method of solid gas phase epitaxy. During the growth characteristic voids are formed in Si at the SiC/Si ... -
Spectroscopical analyis of strained silicon quantum wells
(SPIE, 2005)In this study, Strained silicon Quantum Wells (QW) were characterised using a variety of micro-scopical techniques. Among the techniques used were Transmission Electron Microscopy (TEM), Elemental Electron Loss ... -
Optical characteristics of ordinary and tunable 1D Si photonic crystals in the mid-infrared range
(2005)Reflection spectra and photonic band gaps (PBGs) for periodic structures consisting of grooved Si infiltrated with nematic liquid crystals (LCs) E7 have been obtained experimentally and by simulation. Periodically grooved ... -
Investigations on rare-earth doped alumino-silicate xerogel incorporated in micro-channel glass and porous silicon
(2005)Porous materials in general have received great attention from the last century. The development of new porous materials and the preparation of new composites based on porous materials is a subject of interest. The development ... -
Molecular tilt angle and order parameter of low molar mass ferroelectric liquid crystal using IR spectroscopy
(1996)Fourier transform infrared spectroscopy of a ferroelectric liquid-crystalline material: 4-(3)-(S)- methyl-2-(S)-chloropentanoyloxy-4'-octyloxy-biphenyl has been investigated in the wavenumber range 450 - 4000 cm-1 for ... -
Observation of an anchoring transition in a discotic liquid crystal
(EDP Sciences, 1998)We report the anchoring transition in a discotic liquid crystal, hexapentyloxytriphenylene (HPT), from edge-on to side-on alignment in a discotic phase. The topology, easy direction of orientation and the coating of the ... -
Quantum dot energy relaxation mediated by plasmon emission in doped covalent semiconductor heterostructures
(American Physical Society, 2007)The interaction between interface plasmons within a doped substrate and quantum dot electrons or holes has been theoretically studied in double heterostructures based on covalent semiconductors. The interface plasmon modes, ... -
Whispering-gallery modes in photonic tubes
(Society of Photo-optical Instrumentation Engineers (SPIE), 2007)A new method has been developed to fabricate microtube resonators with strong whispering-gallery-mode emission and quality factors up to 3000. -
Microtube cavities from templated filtering: confined optical modes and amplified spontaneous emission
(American Institute of Physics, 2006)The authors demonstrate a new route to the fabrication of individual aluminosilicate microtubes that can act as micron-scale optical cylindrical resonators. The microtubes were prepared using a simple vacuum assisted ... -
Optical properties of diamond films grown by MPCVD method with alternating nanodiamond injection
(Society of Photo-optical Instrumentation Engineers (SPIE), 2005)Transparent polycrystalline diamond films with grain size ranging from a few tens to hundreds of nanometres were prepared on fused silica substrate by Microwave Chemical Plasma Vapour Deposition method (MPCVD). The ... -
Analysis of Strain and Intermixing in a Single Layer Ge/Si dots using polarized Raman Spectroscopy
(2006)The built-in strain and composition of as-grown and Si-capped single layers of Ge?Si dots grown at various temperatures (460?800 ?C) are studied by a comparative analysis of the Ge-Ge and Si-Ge modes in the polarized Raman ... -
Design of 1D composite photonic crystals with an extended photonic band gap
(2006)A technique for photonic band gap PBG extension based on mixing photonic crystals with different lattice constants or filling factors is suggested. For the design of photonic crystals with maximal PBG extension the gap ... -
On the impact of introducing advanced devices into a cognitive radio network
(IEEE, 2009)Abstract?Cognitive Radio promises better spectrum utilisation through decentralised control, sensing and decision making. The devices are intended to be inexpensive, upgradeable and adaptable. However, introducing ... -
Optical Study of Platinum-Modified Amorphous Carbon
(Fizika i Tekhnika Poluprovodnikov, 2009)Films of amorphous carbon a-C and a platinum-modified amorphous carbon composite a-C-Pt, produced by magnetron sputtering in a wide range of thicknesses and modifying platinum concentrations in the optimal mode for the ... -
Determination of substitutional carbon content in rapid thermal chemical vapour deposited Si1-x-yGexCy on Si (1 0 0) using Raman spectroscopy
(Elsevier, 2009)The effect of carbon content on strain compensation in rapid thermal chemical vapour deposited Si1-x-yGexCy films was investigated using Raman spectroscopy as x varies from 10% to 16% and y varies from 0% to 1.8%. The ... -
Cognitive radio and networking research at Virginia Tech
(IEEE, 2009)More than a dozen Wireless @ Virginia Tech faculty are working to address the broad research agenda of cognitive radio and cognitive networks. Our core research team spans the protocol stack from radio and reconfigura ...
