dc.contributor.author | BOLAND, JOHN | en |
dc.date.accessioned | 2017-01-17T11:22:33Z | |
dc.date.available | 2017-01-17T11:22:33Z | |
dc.date.created | 2016 | en |
dc.date.issued | 2016 | en |
dc.date.submitted | 2016 | en |
dc.identifier.citation | Lee S, Park J.-B, Lee M.-J, Boland J.J, Multilevel resistance in ZnO nanowire memristors enabled by hydrogen annealing treatment, AIP Advances, 6, 12, 2016 | en |
dc.identifier.other | Y | en |
dc.description | PUBLISHED | en |
dc.description | Export Date: 13 January 2017 | en |
dc.description.abstract | In non-volatile memory technology, various attempts to overcome both technology and physical limits have led to development of neuromorphic devices like memristors. Moreover, multilevel resistance and the potential for enhanced memory capability has attracted much attention. Here, we report memristive characteristics and multilevel resistance in a hydrogen annealed ZnO nanowire device. We find that the memristive behavior including negative differential resistance arises from trapped electrons in an amorphous ZnO interfacial layer at the injection electrode that is formed following hydrogen annealing. Furthermore, we demonstrate that it is possible to control electrons trapping and detrapping by the controlled application of voltage pulses to establish a multilevel memory. These results could pave the way for multifunctional memory device technology such as the artificial neuromorphic system. | en |
dc.description.sponsorship | J.J.B. acknowledges funding from the European Research Council (ERC) under Advanced Grant 321160. This publication has emanated from research supported in part by a research grant from Science Foundation Ireland (SFI) under Grant Number SFI/12/RC/2278. The facilities and staff at the Advanced Microscopy Laboratory at Trinity College Dublin are acknowledged for their support, as is the TCHPC at Trinity College Dublin for computational resources. This work was also supported by the DGIST MIREBraiN Program of the Ministry of Science, ICT and Future Planning (16-NB-05, M.-J. Lee).
References | en |
dc.relation.ispartofseries | AIP Advances | en |
dc.relation.ispartofseries | 6 | en |
dc.relation.ispartofseries | 12 | en |
dc.rights | Y | en |
dc.subject | amorphous ZnO interfacial layer | en |
dc.subject.lcsh | amorphous ZnO interfacial layer | en |
dc.title | Multilevel resistance in ZnO nanowire memristors enabled by hydrogen annealing treatment | en |
dc.type | Journal Article | en |
dc.type.supercollection | scholarly_publications | en |
dc.type.supercollection | refereed_publications | en |
dc.identifier.peoplefinderurl | http://people.tcd.ie/jboland | en |
dc.identifier.rssinternalid | 142858 | en |
dc.identifier.doi | http://dx.doi.org/10.1063/1.4971820 | en |
dc.rights.ecaccessrights | openAccess | |
dc.identifier.rssuri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85003549274&doi=10.1063%2f1.4971820&partnerID=40&md5=a06592e520069e67fc5d090d5bc69be1 | en |
dc.contributor.sponsor | Science Foundation Ireland (SFI) | en |
dc.contributor.sponsorGrantNumber | SFI/12/RC/2278 | en |
dc.identifier.uri | http://hdl.handle.net/2262/78760 | |