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dc.contributor.advisorKrstić, Vojislave
dc.contributor.authorKoleśnik, Maria M.
dc.date.accessioned2017-01-19T15:46:20Z
dc.date.available2017-01-19T15:46:20Z
dc.date.issued2013
dc.identifier.citationMaria M. Koleśnik, 'Contact-resistivity and transport properties in lateral germanium nanowire devices', [thesis], Trinity College (Dublin, Ireland). School of Physics, 2013, pp 191
dc.identifier.otherTHESIS 9976
dc.description.abstractQuasi-one-dimensional materials, such as germanium nanowires, are anticipated to provide enhanced functionality for high-tech electronic and spin- tronic device components. The primary aim of this thesis is to study the contact-resistivity and transport effects effects associated with the quasi-one- dimensional confinement and doping in lateral side-contacted Ge nanowire devices by electrical probing. In addition, a case study is carried out on Ag (metallic) nanowires in order to distinguish universal nanoscale contact- and transport-effects.
dc.format1 volume
dc.language.isoen
dc.publisherTrinity College (Dublin, Ireland). School of Physics
dc.relation.isversionofhttp://stella.catalogue.tcd.ie/iii/encore/record/C__Rb15349139
dc.subjectPhysics, Ph.D.
dc.subjectPh.D. Trinity College Dublin
dc.titleContact-resistivity and transport properties in lateral germanium nanowire devices
dc.typethesis
dc.type.supercollectionthesis_dissertations
dc.type.supercollectionrefereed_publications
dc.type.qualificationlevelDoctoral
dc.type.qualificationnameDoctor of Philosophy (Ph.D.)
dc.rights.ecaccessrightsopenAccess
dc.format.extentpaginationpp 191
dc.description.noteTARA (Trinity’s Access to Research Archive) has a robust takedown policy. Please contact us if you have any concerns: rssadmin@tcd.ie
dc.identifier.urihttp://hdl.handle.net/2262/79087


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