Transparent, Flexible Silicon Nanostructured Wire Networks with Seamless Junctions for High-Performance Photodetector Applications
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Journal ArticleDate:
2018Access:
openAccessCitation:
Hossain, M; Kumar, GS; Prabhava, SNB; McCloskey, D; Acharya, S; Rao, KDM; Boland, JJ., Transparent, Flexible Silicon Nanostructured Wire Networks with Seamless Junctions for High-Performance Photodetector Applications, ACS NANO, 12, 5, 2018, 4727 - 4735Abstract:
Optically transparent photodetectors are crucial in next-generation optoelectronic applications including smart windows and transparent image sensors. Designing photodetectors with high transparency, photoresponsivity, and robust mechanical flexibility remains a significant challenge, as is managing the inevitable trade-off between high transparency and strong photoresponse. Here we report a scalable method to produce flexible crystalline Si nanostructured wire (NW) networks fabricated from silicon-on-insulator (SOI) with seamless junctions and highly responsive porous Si segments that combine to deliver exceptional performance. These networks show high transparency (∼92% at 550 nm), broadband photodetection (350 to 950 nm) with excellent responsivity (25 A/W), optical response time (0.58 ms), and mechanical flexibility (1000 cycles). Temperature-dependent photocurrent measurements indicate the presence of localized electronic states in the porous Si segments, which play a crucial role in light harvesting and photocarrier generation. The scalable low-cost approach based on SOI has the potential to deliver new classes of flexible optoelectronic devices, including next-generation photodetectors and solar cells.
Sponsor
Grant Number
European Research Council (ERC)
321160
Science Foundation Ireland (SFI)
12/IA/1482
Author's Homepage:
http://people.tcd.ie/jbolandhttp://people.tcd.ie/dmcclosk
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PUBLISHEDcited by 1
Author: Boland, John; Mc Closkey, David
Sponsor:
European Research Council (ERC)Science Foundation Ireland (SFI)
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Series/Report no:
ACS NANO12
5
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Full text availableSubject (TCD):
Nanoscience & Materials , AMORPHOUS-SILICON , DEVICE , DOPED SILICON , FLEXIBLE , Flexible conducting device , Flexible device , JUNCTIONS , NANOCONTACTS , NANOSCALE , NANOSTRUCTURES , NANOWIRE FORMATION , NANOWIRES , Nanotechnology , Optoelectronics , POROUS SILICON , SILICON , SILICON DETECTORS , SILICON-ON-INSULATOR , Semiconductor optoelectronics , TRANSPARENT , Transparent conducting device , Transparent device , nanopores , nanowire network , photodetector , seamless , seamless junction , seamless nanowire junction , seamless nanowire networkDOI:
http://dx.doi.org/10.1021/acsnano.8b01387ISSN:
1936-0851Metadata
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