Optimized single-layer MoS2 field-effect transistors by non-covalent functionalisation

Abstract

Field-effect transistors (FETs) with non-covalently functionalised molybdenum disulfide (MoS2) channels grown by chemical vapourdeposition (CVD) on SiO2are reported. The dangling-bond-freesurface of MoS2was functionalised with a perylene bisimidederivative to allow for the deposition of Al2O3dielectric. Thisallowed the fabrication of top-gated, fully encapsulated MoS2FETs. Furthermore, by the definition of vertical contacts on MoS2,devices, in which the channel area was never exposed to polymers,were fabricated. The MoS2FETs showed some of the highest mobi-lities for transistors fabricated on SiO2with Al2O3as the top-gatedielectric reported so far. Thus, gate-stack engineering using inno-vative chemistry is a promising approach for the fabrication ofreliable electronic devices based on 2D materials.