Spin-dependent transport in multifunctional tunnel junctions
Citation:
Nuala Mai Caffrey, 'Spin-dependent transport in multifunctional tunnel junctions', [thesis], Trinity College (Dublin, Ireland). School of Physics, 2012, pp 217Abstract:
Spin-dependent tunnelling between ferromagnetic electrodes separated by insulating
oxide barriers has long attracted scientific and commercial interest. In the last
decade it became evident that the insulating layer was more than just a simple barrier
through which electrons tunnel. It is wave-function symmetry selective, making the
tunnelling process sensitive to its electronic structure. The understanding of such a
concept suggests that one can engineer the transport properties of a tunnel junction
by carefully selecting the insulating barrier and the metallic electrodes. Ferroelectric
materials are of particular interest as barriers due to additional functionality offered
by the electric polarisation. Indeed, the inclusion of a ferroelectric barrier in a ferromagnetic
tunnel junction is predicted to become the basis for a novel resistive based
memory.
Author: Caffrey, Nuala Mai
Advisor:
Sanvito, StefanoPublisher:
Trinity College (Dublin, Ireland). School of PhysicsNote:
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thesisAvailability:
Full text availableKeywords:
Physics, Ph.D., Ph.D. Trinity College Dublin.Metadata
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