Charging, doping and gating of a single dangling bond on a bare Si(100)-c(4x2) surface
Citation:
Mauro Mantega, 'Charging, doping and gating of a single dangling bond on a bare Si(100)-c(4x2) surface', [thesis], Trinity College (Dublin, Ireland). School of Physics, 2012, pp 218Download Item:
Abstract:
Despite the increasing interest in novel materials for the next generation of microelectronic devices, such as graphene and topological insulators, Si(100) surface is still the most important substrate for nano-device applications. Its high stability and the possibility of manipulating and functionalizing the surface properties at an atomic level are opening up new perspectives for a wide range of applications ranging from transistor downscaling, dictated by Moore's law, to quantum computing.
Author: Mantega, Mauro
Advisor:
Sanvito, StefanoPublisher:
Trinity College (Dublin, Ireland). School of PhysicsNote:
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Physics, Ph.D., Ph.D. Trinity College Dublin.Metadata
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