Step-induced defects in thin films and the effect on their electrical and magnetic properties
Citation:
Askar Syrlybekov, 'Step-induced defects in thin films and the effect on their electrical and magnetic properties', [thesis], Trinity College (Dublin, Ireland). School of Physics, 2015, pp 151Abstract:
This thesis investigates step-induced defects in thin films and their effect
on the electrical and magnetic properties. Stepped epitaxial Fe3O4 thin films with
different thickness were fabricated and their magnetic properties were
investigated. The magnetization measurements suggest that the steps induce an
additional anisotropy, which has an easy axis perpendicular to steps and the hard
axis along the steps. In addition, electrical analysis of a Fe3O4 film grown on
stepped SrTiO3 substrate revealed anisotropic resistive switching. When the
current was directed parallel to the step-edge direction, lower voltages were
required to switch to the lower conducting state than the case where current was
perpendicular to the step-edges. This is attributed to the high density of antiphase
boundaries present at step edges. In order to control defect densities, a
thorough study was carried out to control periodicity and height of the vicinal
MgO (100) substrates which is instigated by annealing them at high temperature
in air. Furthermore, transport measurements on trilayer graphene synthesized on
vicinal cubic-SiC(001), clearly demonstrate that the self-aligned periodic
nanodomain boundaries (NBs) induce a charge transport gap.
Author: Syrlybekov, Askar
Advisor:
Shvets, IgorPublisher:
Trinity College (Dublin, Ireland). School of PhysicsNote:
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Physics, Ph.D., Ph.D. Trinity College Dublin.Metadata
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