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dc.contributor.authorFLEISCHER, KARSTEN
dc.contributor.authorSHVETS, IGOR
dc.contributor.authorCAFFREY, DAVID
dc.contributor.authorAli, D.
dc.contributor.authorButt, M.Z.
dc.contributor.authorCoughlan, C.
dc.date.accessioned2020-03-09T12:01:03Z
dc.date.available2020-03-09T12:01:03Z
dc.date.issued2018
dc.date.submitted2018en
dc.identifier.citationAli, D., Butt, M.Z., Coughlan, C., Caffrey, D., Shvets, I.V. & Flesicher, K., Nitrogen grain-boundary passivation of In-doped ZnO transparent conducting oxide, PHYSICAL REVIEW MATERIALS, 2, 2018, 043402en
dc.identifier.otherY
dc.descriptionPUBLISHEDen
dc.description.abstractWe have investigated the properties and conduction limitations of spray pyrolysis grown, low-cost transparent conducting oxide ZnO thin films doped with indium. We analyze the optical, electrical, and crystallographic properties as functions of In content with a specific focus on postgrowth heat treatment of these thin films at 320∘C in an inert, nitrogen atmosphere, which improves the films electrical properties considerably. The effect was found to be dominated by nitrogen-induced grain-boundary passivation, identified by a combined study using in situ resistance measurement upon annealing, x-ray photoelectron spectroscopy, photoluminescence, and x-ray diffraction studies. We also highlight the chemical mechanism of morphologic and crystallographic changes found in films with high indium content. By optimizing growth conditions according to these findings, ZnO:In with a resistivity as low as 2×10−3Ωcm, high optical quality (T≈90%), and sheet resistance of 32Ω/□ has been obtained without any need for postgrowth treatments.en
dc.format.extent043402en
dc.language.isoenen
dc.relation.ispartofseriesPHYSICAL REVIEW MATERIALS;
dc.relation.ispartofseries2;
dc.rightsYen
dc.subjectAdsorptionen
dc.subjectCompositionen
dc.subjectElectrical conductivityen
dc.subjectPhotoemissionen
dc.subjectOxidesen
dc.subjectChemical vapor depositionen
dc.subjectX-ray diffractionen
dc.titleNitrogen grain-boundary passivation of In-doped ZnO transparent conducting oxideen
dc.typeJournal Articleen
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/fleisck
dc.identifier.peoplefinderurlhttp://people.tcd.ie/ivchvets
dc.identifier.peoplefinderurlhttp://people.tcd.ie/caffreda
dc.identifier.rssinternalid186697
dc.identifier.doihttps://doi.org/10.1103/PhysRevMaterials.2.043402
dc.rights.ecaccessrightsopenAccess
dc.subject.TCDThemeNanoscience & Materialsen
dc.subject.TCDThemeSmart & Sustainable Planeten
dc.subject.TCDTagELECTRICAL CONDUCTIVITYen
dc.subject.TCDTagMOBILITYen
dc.subject.TCDTagPyrolysis Chemistryen
dc.subject.TCDTagSEMICONDUCTOR DEVICES AND MATERIALSen
dc.subject.TCDTagTransparent Conducting Oxideen
dc.subject.TCDTagXPSen
dc.subject.TCDTagZNO FILMSen
dc.identifier.orcid_id0000-0002-7638-4480
dc.status.accessibleNen
dc.contributor.sponsorScience Foundation Ireland (SFI)en
dc.contributor.sponsorGrantNumber12/IA/1264en
dc.identifier.urihttps://link.springer.com/chapter/10.1007/978-3-319-47313-0_8
dc.identifier.urihttp://hdl.handle.net/2262/91736


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