Dependence of Photocurrent Enhancements in Quantum Dot (QD)-Sensitized MoS2 Devices on MoS2 Film Properties

Abstract

This report demonstrates highly efficient nonradiative energy transfer (NRET) from alloyed CdSeS/ZnS semiconductor nanocrystal quantum dots (QDs) to MoS2 films of varying layer thicknesses, including pristine monolayers, mixed monolayer/bilayer, polycrystalline bilayers, and bulk‐like thicknesses, with NRET efficiencies of over 90%. Large‐area MoS2 films are grown on Si/SiO2 substrates by chemical vapor deposition. Despite the ultrahigh NRET efficiencies there is no distinct increase in the MoS2 photoluminescence intensity. However, by studying the optoelectronic properties of the MoS2 devices before and after adding the QD sensitizing layer photocurrent enhancements as large as ≈14‐fold for pristine monolayer devices are observed, with enhancements on the order of ≈2‐fold for MoS2 devices of mixed monolayer and bilayer thicknesses. For the polycrystalline bilayer and bulk‐like MoS2 devices there is almost no increase in the photocurrent after adding the QDs. Industrially scalable techniques are specifically utilized to fabricate the samples studied in this report, demonstrating the viability of this hybrid structure for commercial photodetector or light harvesting applications.