| dc.contributor.author | Shvets, Igor | |
| dc.date.accessioned | 2021-01-13T11:31:05Z | |
| dc.date.available | 2021-01-13T11:31:05Z | |
| dc.date.issued | 2019 | |
| dc.date.submitted | 2019 | en |
| dc.identifier.citation | Wang, J. and Cuccureddu, F. and Ramos, R. and Coileain, C.O. and Shvets, I.V. and Wu, H.-C., Magnetoresistance of Nanoscale Domain Walls Formed in Arrays of Parallel Nanowires, SPIN, 9, 1, 2019 | en |
| dc.identifier.other | Y | |
| dc.description.abstract | We present the possibility of enhancing magnetoresistance by controlling nanoscale domain wall (DW)
width in a planar nanowire array. Results based on the micromagnetic calculations show that DW width
decreases with increasing exchange bias field and decreases with reducing exchange interaction between
neighboring nanowires. Fe/Fe3O4 nanowire arrays were grown on c-plane sapphire to demonstrate the
feasibility of this concept, and an enhanced MR ratio of 3.7% was observed at room temperature. | en |
| dc.language.iso | en | en |
| dc.relation.ispartofseries | SPIN; | |
| dc.relation.ispartofseries | 9; | |
| dc.relation.ispartofseries | 1; | |
| dc.rights | Y | en |
| dc.subject | Magnetoresistance | en |
| dc.subject | Nanowire arrays | en |
| dc.title | Magnetoresistance of Nanoscale Domain Walls Formed in Arrays of Parallel Nanowires | en |
| dc.type | Journal Article | en |
| dc.type.supercollection | scholarly_publications | en |
| dc.type.supercollection | refereed_publications | en |
| dc.identifier.peoplefinderurl | http://people.tcd.ie/caffreda | |
| dc.identifier.peoplefinderurl | http://people.tcd.ie/ivchvets | |
| dc.identifier.rssinternalid | 206220 | |
| dc.identifier.doi | http://dx.doi.org/10.1142/S2010324719500048 | |
| dc.rights.ecaccessrights | openAccess | |
| dc.identifier.uri | http://hdl.handle.net/2262/94660 | |
