Highly Selective Non-Covalent On-Chip Functionalization of Layered Materials
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2021Access:
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Tilmann, R. and Weià , C. and Cullen, C.P. and Peters, L. and Hartwig, O. and Höltgen, L. and Stimpel-Lindner, T. and Knirsch, K.C. and McEvoy, N. and Hirsch, A. and Duesberg, G.S., Highly Selective Non-Covalent On-Chip Functionalization of Layered Materials, Advanced Electronic Materials, 2021Download Item:
Abstract:
Non-covalent functionalization of layered 2D materials is an essential tool
to modify and fully harness their optical, electrical, and chemical properties.
Herein, a facile method enabling the selective formation of self-assembled
monolayers (SAMs) of perylene bisimide (PBI) on transition metal dichal-
cogenides (TMDs), directly on the growth substrate (on-chip), is presented.
Laterally-resolved infrared atomic force microscopy (AFM-IR) and time-of-
flight secondary ion mass spectrometry (TOF-SIMS) are applied as superior
techniques to gain detailed information beyond traditional surface analysis
techniques, such as Raman spectroscopy and AFM, on TMD/PBI structures.
The highly selective functionalization conducted in organic solution on MoS
and WSe
opens up a pathway to controllable, versatile functionalization of
layered materials, which is highly sought after for its potential in passiva-
tion, tuning of properties and applications in optics, electronics, and (bio-)
sensing.
Sponsor
Grant Number
Science Foundation Ireland (SFI)
PI_15/IA/3131
Science Foundation Ireland (SFI)
5/SIRG/3329
Author's Homepage:
http://people.tcd.ie/duesberghttp://people.tcd.ie/mcevoyni
Author: Duesberg, Georg; Mc Evoy, Niall
Sponsor:
Science Foundation Ireland (SFI)Science Foundation Ireland (SFI)
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Advanced Electronic MaterialsAvailability:
Full text availableDOI:
http://dx.doi.org/10.1002/aelm.202000564Metadata
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