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dc.contributor.authorDuesberg, Georg
dc.date.accessioned2021-05-19T08:54:11Z
dc.date.available2021-05-19T08:54:11Z
dc.date.issued2020
dc.date.submitted2020en
dc.identifier.citationRicciardella, F. and Vollebregt, S. and Polichetti, T. and Sarro, P.M. and Duesberg, G.S., Low-humidity sensing properties of multi-layered graphene grown by chemical vapor deposition, Sensors (Switzerland), 2020, 20, 11, 1-12en
dc.identifier.otherY
dc.description.abstractHumidity sensing is fundamental in some applications, as humidity can be a strong interferent in the detection of analytes under environmental conditions. Ideally, materials sensitive or insensitive towards humidity are strongly needed for the sensors used in the first or second case, respectively.We present here the sensing properties of multi-layered graphene (MLG) upon exposure to differentlevels of relative humidity. We synthesize MLG by chemical vapor deposition, as shown by Ramanspectroscopy, Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). Throughan MLG-based resistor, we show that MLG is scarcely sensitive to humidity in the range 30%–70%,determining current variations in the range of 0.005%/%relative humidity (RH) well below the variationinduced by other analytes. These findings, due to the morphological properties of MLG, suggestthat defective MLG is the ideal sensing material to implement in gas sensors operating both at room temperature and humid conditions.en
dc.format.extent1-12en
dc.language.isoenen
dc.relation.ispartofseriesSensors (Switzerland);
dc.relation.ispartofseries20;
dc.relation.ispartofseries11;
dc.rightsYen
dc.subjectGrapheneen
dc.subjectDefectsen
dc.subjectHumidityen
dc.subjectChemical vapor depositionen
dc.subjectSensitivityen
dc.subjectSensorsen
dc.titleLow-humidity sensing properties of multi-layered graphene grown by chemical vapor depositionen
dc.typeJournal Articleen
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/duesberg
dc.identifier.rssinternalid230150
dc.identifier.doihttp://dx.doi.org/10.3390/s20113174
dc.rights.ecaccessrightsopenAccess
dc.identifier.urihttp://hdl.handle.net/2262/96376


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