Tunable linear magnetoresistance in MgO magnetic tunnel junction sensors using two pinned CoFeB electrodes
Citation:
Chen, JY, Feng, JF, Coey, JMD, Tunable linear magnetoresistance in MgO magnetic tunnel junction sensors using two pinned CoFeB electrodes, Applied Physics Letters, 100, 2012, 142407-Download Item:
Abstract:
MgO-barrier magnetic tunnel junction sensors with both CoFeB layers pinned by IrMn have been
fabricated, which show a tunneling magnetoresistance (TMR) of up to 255% at room temperature.
The perpendicular configuration for magnetic field sensing is set using a two-step field annealing
process. The linear TMR field range and sensitivity are tuned by inserting an ultrathin Ru layer
between the upper IrMn and the top-pinned CoFeB layer. The field sensitivity reaches 26%/mT,
while the noise detectivity is about 90nT/
ffiffiffiffiffiffi
Hz
p
at 10Hz for a 0.3nm Ru insertion layer. The bias
dependence of the noise suggests that this is a useful design for sensor applications
Sponsor
Grant Number
Science Foundation Ireland (SFI)
(NISE) Pro- ject (10/IN1/I3002).
Author's Homepage:
http://people.tcd.ie/jcoeyDescription:
PUBLISHED
Author: COEY, JOHN
Sponsor:
Science Foundation Ireland (SFI)Type of material:
Journal ArticleCollections
Series/Report no:
Applied Physics Letters100
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Full text availableKeywords:
Magnetic tunnel junctionsDOI:
http://dx.doi.org/10.1063/1.3701277Metadata
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