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dc.contributor.authorCOEY, JOHNen
dc.date.accessioned2014-11-24T16:22:48Z
dc.date.available2014-11-24T16:22:48Z
dc.date.issued2012en
dc.date.submitted2012en
dc.identifier.citationChen, JY, Feng, JF, Coey, JMD, Tunable linear magnetoresistance in MgO magnetic tunnel junction sensors using two pinned CoFeB electrodes, Applied Physics Letters, 100, 2012, 142407-en
dc.identifier.otherYen
dc.descriptionPUBLISHEDen
dc.description.abstractMgO-barrier magnetic tunnel junction sensors with both CoFeB layers pinned by IrMn have been fabricated, which show a tunneling magnetoresistance (TMR) of up to 255% at room temperature. The perpendicular configuration for magnetic field sensing is set using a two-step field annealing process. The linear TMR field range and sensitivity are tuned by inserting an ultrathin Ru layer between the upper IrMn and the top-pinned CoFeB layer. The field sensitivity reaches 26%/mT, while the noise detectivity is about 90nT/ ffiffiffiffiffiffi Hz p at 10Hz for a 0.3nm Ru insertion layer. The bias dependence of the noise suggests that this is a useful design for sensor applicationsen
dc.description.sponsorshipSFI NICEen
dc.format.extent142407en
dc.language.isoenen
dc.relation.ispartofseriesApplied Physics Lettersen
dc.relation.ispartofseries100en
dc.rightsYen
dc.subjectMagnetic tunnel junctionsen
dc.titleTunable linear magnetoresistance in MgO magnetic tunnel junction sensors using two pinned CoFeB electrodesen
dc.typeJournal Articleen
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/jcoeyen
dc.identifier.rssinternalid93642en
dc.identifier.doihttp://dx.doi.org/10.1063/1.3701277en
dc.rights.ecaccessrightsOpenAccess
dc.contributor.sponsorScience Foundation Ireland (SFI)en
dc.contributor.sponsorGrantNumber(NISE) Pro- ject (10/IN1/I3002).en
dc.identifier.urihttp://hdl.handle.net/2262/72165


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