Defect-moderated oxidative etching of MoS<inf>2</inf>
Citation:
Maguire, P. and Jadwiszczak, J. and O'Brien, M. and Keane, D. and Duesberg, G.S. and McEvoy, N. and Zhang, H., Defect-moderated oxidative etching of MoS<inf>2</inf>, Journal of Applied Physics, 126, 16, 2019Download Item:
Abstract:
We report a simple technique for the selective etching of bilayer and monolayer MoS 2. In this work, chosen regions of MoS 2 were activated for oxygen adsorption and reaction by the application of low doses of He + at 30 keV in a gas ion microscope. Raman spectroscopy, optical microscopy, and scanning electron microscopy were used to characterize both the etched features and the remaining material. It has been found that by using a pretreatment to introduce defects, MoS 2 can be etched very efficiently and with high region specificity by heating in air.
Sponsor
Grant Number
Science Foundation Ireland (SFI)
15/SIRG/3329
Science Foundation Ireland (SFI)
15/IA/3131
Science Foundation Ireland (SFI)
12/RC/2278
Science Foundation Ireland (SFI)
11/PI/1105
Science Foundation Ireland (SFI)
08/CE/I143
Science Foundation Ireland (SFI)
07/SK/I1220
Author's Homepage:
http://people.tcd.ie/hozhangDescription:
PUBLISHEDcited By 1
Author: Zhang, Hongzhou
Sponsor:
Science Foundation Ireland (SFI)Science Foundation Ireland (SFI)
Science Foundation Ireland (SFI)
Science Foundation Ireland (SFI)
Science Foundation Ireland (SFI)
Science Foundation Ireland (SFI)
Type of material:
Journal ArticleCollections
Series/Report no:
Journal of Applied Physics126
16
Availability:
Full text availableKeywords:
monolayer MoS 2, oxygen adsorption, scanning electron microscopy, Optical microscopy, Oxidation, 2D materials, Crystallographic defects, Scanning electron microscopy, Focused ion beam, Raman spectroscopy, Chemical vapor depositionSubject (TCD):
Nanoscience & MaterialsDOI:
http://dx.doi.org/10.1063/1.5115036Metadata
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